MOSfet Power Loss詳細(xì)計(jì)算公式
標(biāo)簽： MOSfet Power Loss
上傳時(shí)間： 2015-06-15
上傳用戶：huangtongyue
Abstract: Impedance mismatches in a radio-frequency (RF) electrical transmission line cause power loss andreflected energy. Voltage standing wave ratio (VSWR) is a way to measure transmission line imperfections. Thistutorial defines VSWR and explains how it is calculated. Finally, an antenna VSWR monitoring system is shown.
標(biāo)簽： VSWR 輸電線路 精確測(cè)量 電壓駐波比
上傳時(shí)間： 2013-10-19
上傳用戶：yuanwenjiao
PW1555 is a programmable current limit switch with input voltage range selection and outputvoltage clamping. Extremely low RDS(ON) of the integrated protection N-channel FET helps toreduce power loss during the normal operation. Programmable soft-start time controls the slew rateof the output voltage during the start-up time. Independent enable control allows the complicatedsystem sequencing control. It integrates the over-temperature protection shutdown andautorecovery with hystersis
標(biāo)簽： pw1555
上傳時(shí)間： 2022-02-14
上傳用戶：
CR6221 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is opti
標(biāo)簽： Current Switch Power 6221
上傳時(shí)間： 2013-04-24
上傳用戶：brucewan
CR6228 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is opti
標(biāo)簽： Current Switch Power 6228
上傳時(shí)間： 2013-05-17
上傳用戶：natopsi
摘要：從功率MOSFET內(nèi)部結(jié)構(gòu)和極間電容的電壓依賴關(guān)系出發(fā)，對(duì)功率MOSFET的開關(guān)現(xiàn)象及其原因進(jìn)行了較深入分析。從實(shí)際應(yīng)用的角度，對(duì)功率MOSFET開關(guān)過程的功率損耗和所需驅(qū)動(dòng)功率進(jìn)行了研究，提出了有關(guān)參數(shù)的計(jì)算方法，并對(duì)多種因素對(duì)開關(guān)特性的影響效果進(jìn)行了實(shí)驗(yàn)研究，所得出的結(jié)論對(duì)于功率MOSFET的正確運(yùn)用和設(shè)計(jì)合理的MoSFET驅(qū)動(dòng)電路具有指導(dǎo)意義．
標(biāo)簽： MOSFET Power 實(shí)際應(yīng)用 條件下
上傳時(shí)間： 2013-11-10
上傳用戶：wfeel
It has been over a decade since the Chinese publication of Line Loss in Electric Power Systems. To keep pace with technological developments, I started a revision as early as 2002, following the main principles that the theoretical framework and characteristics of the first edition should be retained, with new contents added according to new problems after the reform of electric power systems and the new requirements for line loss management practices and in combination with practical experience.
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
Power Electronics is one of modern and key technologies in Electrical and Electronics Engineering for green power, sustainable energy systems, and smart grids. Especially, the transformation of existing electric power systems into smart grids is currently a global trend. The gradual increase of distributed generators in smart grids indicates a wide and important role for power electronic converters in the electric power system, also with the increased use of power electronics devices (nonlinear loads) and motor loadings, low cost, low-loss and high-performance shunt current quality compensators are highly demanded by power customers to solve current quality problems caused by those loadings.
標(biāo)簽： Electronics Parallel Filters Power
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
設(shè)計(jì)功率MOSFET驅(qū)動(dòng)電路時(shí)需重點(diǎn)考慮寄生參數(shù)對(duì)電路的影響。米勒電容作為MOSFET器件的一項(xiàng)重要參數(shù),在驅(qū)動(dòng)電路的設(shè)計(jì)時(shí)需要重點(diǎn)關(guān)注。重點(diǎn)觀察了MOSFET的開通和關(guān)斷過程中柵極電壓、漏源極電壓和漏源極電流的變化過程,并分析了米勒電容、寄生電感等寄生參數(shù)對(duì)漏源極電壓和漏源極電流的影響。分析了柵極電壓在米勒平臺(tái)附近產(chǎn)生振蕩的原因,并提出了抑制措施,對(duì)功率MOSFET的驅(qū)動(dòng)設(shè)計(jì)具有一定的指導(dǎo)意義。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
標(biāo)簽： mosfet
上傳時(shí)間： 2022-04-02
上傳用戶：默默
MOSFET和IGBT內(nèi)部結(jié)構(gòu)不同, 決定了其應(yīng)用領(lǐng)域的不同.1, 由于MOSFET的結(jié)構(gòu), 通常它可以做到電流很大, 可以到上KA,但是前提耐壓能力沒有IGBT強(qiáng)。2,IGBT 可以做很大功率, 電流和電壓都可以, 就是一點(diǎn)頻率不是太高, 目前IGBT硬開關(guān)速度可以到100KHZ,那已經(jīng)是不錯(cuò)了. 不過相對(duì)于MOSFET的工作頻率還是九牛一毛,MOSFET可以工作到幾百KHZ,上MHZ,以至幾十MHZ,射頻領(lǐng)域的產(chǎn)品.3, 就其應(yīng)用, 根據(jù)其特點(diǎn):MOSFET應(yīng)用于開關(guān)電源, 鎮(zhèn)流器, 高頻感應(yīng)加熱, 高頻逆變焊機(jī), 通信電源等等高頻電源領(lǐng)域;IGBT 集中應(yīng)用于焊機(jī), 逆變器, 變頻器,電鍍電解電源, 超音頻感應(yīng)加熱等領(lǐng)域開關(guān)電源 (Switch Mode Power Supply ；SMPS) 的性能在很大程度上依賴于功率半導(dǎo)體器件的選擇，即開關(guān)管和整流器。雖然沒有萬全的方案來解決選擇IGBT還是MOSFET的問題，但針對(duì)特定SMPS應(yīng)用中的IGBT 和 MOSFET進(jìn)行性能比較，確定關(guān)鍵參數(shù)的范圍還是能起到一定的參考作用。本文將對(duì)一些參數(shù)進(jìn)行探討，如硬開關(guān)和軟開關(guān)ZVS ( 零電壓轉(zhuǎn)換) 拓?fù)渲械拈_關(guān)損耗，并對(duì)電路和器件特性相關(guān)的三個(gè)主要功率開關(guān)損耗—導(dǎo)通損耗、傳導(dǎo)損耗和關(guān)斷損耗進(jìn)行描述。此外，還通過舉例說明二極管的恢復(fù)特性是決定MOSFET或 IGBT 導(dǎo)通開關(guān)損耗的主要因素， 討論二極管恢復(fù)性能對(duì)于硬開關(guān)拓?fù)涞挠绊憽?dǎo)通損耗除了IGBT的電壓下降時(shí)間較長(zhǎng)外， IGBT和功率MOSFET的導(dǎo)通特性十分類似。由基本的IGBT等效電路（見圖1）可看出，完全調(diào)節(jié)PNP BJT集電極基極區(qū)的少數(shù)載流子所需的時(shí)間導(dǎo)致了導(dǎo)通電壓拖尾（ voltage tail ）出現(xiàn)。
上傳時(shí)間： 2022-06-21
上傳用戶：
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